Pdf resistive randomaccess memory reram technology has been viewed as one of the most reliable nonvolatile memories that have are emerging in. Stabilityenhanced resistive randomaccess memory via stacked. Traditional resistive random access memory rram is a metalinsulatormetal mim structure, in which metal oxide is usually used as an. Accelerators based on conventional hardware platforms 7, 4. Resistive random access memory rram synthesis lectures on.
Resistive random access memory rram synthesis lectures. Peking university resistive random access memory rram spice. Resistive random access memory enabled by carbon nanotube. However, it rram, also referred to as reram resistive random access was until the early 2000s that reram was developed with memory, is a form of nonvolatile storage that operates by some pioneer companies such as kbcapacity scale 3. The main scaling bottleneck is poor temporal and spatial uniformity of artificial synapses. Therefore, the resistive switching behavior of siliconoxide based rram can be triggered by the formation of continuous oxygen vacancies and its recombination. Jul 01, 2017 the resistive random access memory rram device has been widely studied due to its excellent memory characteristics and great application potential in different fields.
Pdf resistive random access memory reram muthu dayalan. Zizhen jiang analysis on resistive random access memory rram. For investigating the stability of rram devices, a stacked in x ga 1. Resistive randomaccess memory reram or rram is a type of nonvolatile nv randomaccess ram computer memory that works by changing the. However, only few studies have been conducted regarding rram devices made of alloy. In this paper, resistive switching materials, switching mechanism, and memory characteristics of rram are discussed. Relevant performance parameters of rram devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Despite its promising features, several challenges remain to be addressed for the. Resistive ram rram or reram is a nonvolatile random access memory which uses the variation of the resistance value across a dielectric solidstate material to achieve its functions. Sep 11, 2014 veriloga compact model for oxidebased resistive random access memory rram abstract. The bipolar switching is characterized depending on compliance current under dc sweep mode.
Equivalent circuit of rram cell composed of resistive switching element and parasitic elements. Introduction resistive random access memory rram has attracted a great attention as a potential candidate for nextgeneration emerging memory devices due to its high switching speed, excellent scalability, lowvoltage operation and multilevel storage. Basic working principlea resistive switching memory cell in an rram is generally composed. The two binary states are stored in a metalinsulatormetal mim structure which offers two distinct states of resistance. Defects are essential to switch the resistance states in resistive randomaccess memory rram devices. Resistive random access memory an overview sciencedirect. We demonstrate a dynamic veriloga rram compact model capable of simulating realtime dc cycling and pulsed operation device behavior, including random variability that is inherent to rram. The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory rram characteristics. For investigating the stability of rram devices, a stacked in x ga 1x o structure is designed as its switching layer in this study. The rram device comprises a bottom electrode, a resistive switching layer disposed on the bottom electrode, and a top electrode disposed on the resistive switching layer. Reram memory resistive randomaccess memory rram ou reram. Pdf in this manuscript, recent progress in the area of resistive random access memory rram technology which is considered one of the most standout.
Reram memory resistive randomaccess memory rram ou. This lecture is a comprehensive tutorial of metal oxidebased rram technology from device fabrication to array architecture design. Resistive random access memory and its applications in. A nonvolatile memory does not lose its stored data when power is removed. With present age computing being more and more data driven, there has. New drivers 26% cagr 37% cagr future may have different needs. Resistive random access memory reram based on metal oxides.
Pdf an overview of resistive random access memory devices. For investigating the stability of rram devices, a stacked inxga1xo structure is designed as its switching layer in this study. For the trilayered structure, the set voltage lies around 3. An overview of resistive random access memory devices core. Resistive random access memory rram devices are receiving increasing extensive attention due to their enhanced properties such.
A resistive ram rram or reram cell is a twoterminal element with top and bottom electrodes, and. Resistive random access memory reram based on metal. The efficacy of programming energy controlled switching in. Introduction deepneuralnetworksdnns,whichhavebeencreating signi. Peking university resistive random access memory rram. Redoxbased restive random access memory reram has recently received strong attention due to its potential payout toward high density, lowcost. A random access memory ram can be either volatile or nonvolatile. Resistive random access memory rram research interest into these emerging devices heightened because the nonvolatile memristive behavior demonstrated could be harnessed into nonvolatile memory. It is under development by a number of companies, and some have already patented their own versions of the technology. Resistive random access memory rram devices are noticeable next generation memory devices. The present disclosure provides a resistive random access memory rram cells and methods of making the same.
In recent years, nvm devices have played an increasingly important role in the development of computer memory due to their attractive properties of high density, high speed, and low power consumption. They are being seen as potential alternatives of the flash memory technology. These emerging nvm technologies share some common features. The memory operates by changing the resistance of special dielectric material called a memresistor memory resistor whose. In this paper, we investigate the resistive switching behaviors of an autihftioxpsi memory device. Dynamic conductance characteristics in hfoxbased resistive. A volatile memory loses stored data when power is removed, which is the case for dynamic random access memory dram and static random access memory sram. Fundamentals of oxide resistive random access memory rram. Dec 18, 2020 oxidebased resistive random access memory rram has attracted broad attention as a potential candidate for nextgeneration nonvolatile memories, due to its fast switching speed, small programing. The rram cell includes a transistor and an rram structure electrically connected to the transistor. Resistive random access memory rram has attracted a great attention as a potential candidate for nextgeneration emerging memory devices due to its high switching speed, excellent scalability, lowvoltage operation and multilevel storage. An overview of resistive random access memory devices.
Pdf resistive random access memory reram researchgate. This thesis presents silicon sibased crystalline resistive random access memory crystalline rram artificial synapses for neuromorphic computing. Pdf resistive random access memory rram semantic scholar. In this manuscript, recent progress in the area of resistive random access memory rram technology which is considered one of the most standout emerging memory technologies owing to its high. The rram structure includes a bottom electrode having a via portion and a top portion, a resistive material layer over the bottom electrode and having a same width as the top portion of. Resistive randomaccess memory rram is a nonvolatile memory nvm technology that records data information based on resistance switching rs. Rram technology has made significant progress in the past decade as a competitive candidate for the next generation nonvolatile memory nvm. Various analogprogrammable emerging nonvolatile memory nvm devices such as phase change memory pcm, spintransfer torque magnetic random access memory sttmram or sttram, and resistive random access memory rram are cutting edge technologies. Several emerging nonvolatile memory nvm technologies have been pursued toward to achieving part of these ideal characteristics. Carbon nanotube field effect transistor cntfet and.
Engineering of defects in resistive random access memory. Resistive random access memory rram synthesis lectures on emerging engineering technologies. In this research, glucose was adopted as the switching layer of resistive random access memory rram for transient electronics. Pdf resistive random access memory reram technology has been viewed as one of the most reliable nonvolatile memories that have are emerging in. Resistive random access memory rram has shown very good tolerance to radiation published radiation test results only from test chips a first look at the see performance of two commercial productionlevel rrams. In addition, resistive random access memory rram is also a feasible option for the design of mvl circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell.
Reram bears some similarities to conductivebridging ram cbram, and phasechange memory pcm. Rram for any memory system to work, it needs at least two different detectable states rram detectable memory states are high or low resistance. Conductance quantization in resistive random access memory. To the best of the authors knowledge, crystalline rram reported in this thesis have the lowest. Us9431604b2 resistive random access memory rram and. A comprehensive investigation of moo3 based resistive random.
Feb 03, 2020 highdensity memory with analog type switching is the basic need for neuromorphic computing. Cbram involves one electrode providing ions that dissolve readily in. All nonmetal resistive random access memory scientific. Fundamentals of oxide resistive random access memory. Radiation effects of commercial resistive random access. All nonmetal resistive random access memory scientific reports.
Veriloga compact model for oxidebased resistive random. Helmut baumgart current stateoftheart memory technologies such as flash, static random access memory sram and dynamic ram dram. Each stacked structure in the switching layer, formed via sputtering, consists of varying contents of gallium, which is a. Neural network, sparsity, resistive random access memory, architecture 1.
A comprehensive investigation of moo3 based resistive. Apr 16, 2019 resistive random access memory rram 1,2,3,4,5,6,7,8,9,10,11,12,14,15,16,17,18,19,20,21,22,23 is the highly promising candidate for the next generation nonvolatile memory nvm, because. Memory size 64 kb program endurance program area 62 kb. Resistive randomaccess memory an overview sciencedirect.
The major hindrance for highdensity application of twoterminal resistive random access memory rram array design is. Increasing dependence of the functionality and performance of computing system on the characteristics of the memory subsystem calls for further study on various memory. Introduction lorem ipsum dolor sit amet, consectetur adipiscing elit. Zizhen jiang analysis on resistive random access memory. Pdf 20430 kb pdf plus 4073 kb home series home abstract. Methods and apparatuses for a resistive random access memory rram device are disclosed. Resistive random access memory rram reram is a new type of memory designed to be nonvolatile. Unlike conventional cmos static random access memory sram, the read. The fabricated glucosebased rram showed bipolar switching behavior with stable endurance 100 cycles and retention 104 seconds characteristics, without. Resistive random access memory rram has become one of the most promising candidates for the nextgeneration memory 3 14 because of the intrinsic excellent scalability, simple metalinsulatormetal mim structure, low fabrication cost, 3d integration feasibility, and promising performances in speed, power, endurance, retention, etc. We resort to the thermal reaction model of rram for. Resistive random access memory reram or rram is a type of nonvolatile nv random access ram computer memory that works by changing the resistance across a dielectric solidstate material, often referred to as a memristor reram bears some similarities to conductivebridging ram cbram, and phasechange memory pcm. Stabilityenhanced resistive randomaccess memory via.
Engineering of defects in resistive random access memory devices. Improved intrinsic nonlinear characteristics of ta2o5al2o3based. Integration of redoxbased resistive switching memory devices. A collective study on modeling and simulation of resistive. Investigating the temperature effects on resistive random access. Defect engineering in hfo2tinbased resistive random access. First, a brief overview of the field of emerging memory. In this manuscript, a design approach for ternary combinational logic circuits while using cntfets and rram is presented. The emerging nvm candidates are spintransfertorque magnetoresistive random access memory sttmram 2, phase change random access memory pcram 3, and resistive random access memory rram 4. Resistive random access memory rram david malien nminibapiel old dominion university, 2017 director. Jan 10, 2018 in this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory rram, being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across devices.
Among the many competitors, resistive random access memories rram based on resistive switching in oxides. Glucosebased resistive random access memory for transient. Resistive random access memory reram or rram is a type of nonvolatile nv random access ram computer memory that works by changing the resistance across a dielectric solidstate material, often referred to as a memristor. Sep 24, 2011 with recent progress in material science, resistive random access memory rram devices have attracted interest for nonvolatile, lowpower, nondestructive readout, and highdensity memories. Radiation effects of commercial resistive random access memories. The stability of a resistive random access memory rram device over longterm use has been widely acknowledged as a pertinent concern. At the core of neuromorphic architectures are artificial synapses, which store conductance states to weight collections of electrical spikes according to kirchoffs laws and ohms law. Highthroughput phasefield simulations and machine learning. Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory rram gradually enters the field of view due to its simple structure, fast programerase speed, low power consumption, and so on. Us20234094a1 methods and apparatus for resistive random. Phasechange random access memory, magnetoresistive random access memory, and resistive random access memory rram are known to have nonvolatile data storage capability 1. Alloyed highkbased resistive switching memory in contact.
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